PRODUCTSSuper Low Power SRAM
The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bits.
The HY62SF16101C uses high performance full CMOS process technology and designed for high speed low power circuit technology.
It is particulary well suited for used in high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
< PIN DESCRIPTION >
Low Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
- Fully static operation and Tri-state output
- TTL compatible inputs and outputs
- 1.2V(min) data retention
- Standard pin configuration
- 48 FBGA
Technical Data Sheet
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