PRODUCTSSuper Low Power SRAM

HY62SF16406E

The HY62SF16406E is a high speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits.
The HY62SF16406E uses high performance full CMOS process technology and is designed for high speed low power circuit technology.
It is particulary well-suited for the high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.

 

< PIN DESCRIPTION >

 

Pin Name

Pin Function

Pin Name

Pin Function

/CS1, /CS2

Chip Select

IO1~IO16

Data Input/Output

/WE

Write Enable

A0~A17

Address Input

/OE

Output Enable

Vcc

Power(1.65V~2.3V)

/LB

Low Byte Control(I/O1~I/O8)

Vss

Ground

/UB

Upper Byte Control(I/O9~I/O16)

NC

No Connection

 

Features

  • Fully static operation and Tri-state output
  • TTL compatible inputs and outputs
  • Battery backup
    • 1.2V(min) data retention
  • Standard pin configuration
  • 48-ball FBGA

Technical Data Sheet

Technical Data Sheet Technical Data Sheet의 Part Number, Rev., Update Date, Remark를 나타낸 표 입니다.
Part Number Rev. Update Date Remark
HY62SF16406E 0.2 2004-04-27  

Speed

SpeedSpeed의 Part Number, Speed를 나타낸 표 입니다.
Part Number Speed
70 133MHz, 3-3-3