PRODUCTSSuper Low Power SRAM
The HY62UF16404E is a high speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits.
The HY62UF16404E uses high performance full CMOS process technology and is designed for high speed low power circuit technology.
It is particulary well-suited for the high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
< PIN DESCRIPTION >
Low Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
- Fully static operation and Tri-state output
- TTL compatible inputs and outputs
- 1.2V(min) data retention
- Standard pin configuration
- 48-ball FBGA(6.0mmx7.0mm / 6.0mmx8.0mm)
Technical Data Sheet
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