PRODUCTSSuper Low Power SRAM
The HY62UF16800B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits.
The HY62UF16800B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
< PIN DESCRIPTION >
Low Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
- Fully static operation and Tri-state output
- TTL compatible inputs and outputs
- 1.2V(min) data retention
- Standard pin configuration
Technical Data Sheet
|Part Number||Rev.||Update Date||Remark|