PRODUCTSSuper Low Power SRAM

HY62UF16806B

The HY62UF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits.

The HY62UF16806B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.

 

< PIN DESCRIPTION >

 

Pin Name

Pin Function

Pin Name

Pin Function

/CS1, /CS2

Chip Select

IO1~IO16

Data Input/Output

/WE

Write Enable

A0~A18

Address Input

/OE

Output Enable

Vcc

Power(2.7V~3.3V)

/LB

Low Byte Control(I/O1~I/O8)

Vss

Ground

/UB

Upper Byte Control(I/O9~I/O16)

NC

No Connection

 

Features

  • Fully static operation and Tri-state output
  • TTL compatible inputs and outputs
  • Battery backup(LL/SL-part)
    • 1.2V(min) data retention
  • Standard pin configuration
    • 48-FBGA

 

Technical Data Sheet

Technical Data Sheet Technical Data Sheet의 Part Number, Rev., Update Date, Remark를 나타낸 표 입니다.
Part Number Rev. Update Date Remark
HY62UF16806B 0.1 2004-04-27  

Speed

SpeedSpeed의 Part Number, Speed를 나타낸 표 입니다.
Part Number Speed
55 183MHz
70 133MHz, 3-3-3