PRODUCTSSuper Low Power SRAM

HY62VF08401C

The HY62VF08401C is a high speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits.
The HY62VF08401C uses high performance full CMOS process technology and is designed for high speed low power circuit technology.
It is particulary well-suited for the high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.

< PIN DESCRIPTION >

Pin Name

Pin Function

Pin Name

Pin Function

/CS

Chip Select

IO1~IO8

Data Input/Output

/WE

Write Enable

Vdd

Power(3.0~3.6V)

/OE

Output Enable

Vss

Ground

A0~A18

Address Input

 

 

Features

  • Fully static operation and Tri-state output
  • TTL compatible inputs and outputs
  • Battery backup
    • 1.2V(min) data retention
  • Standard pin configuration
    • 32 TSOP

Technical Data Sheet

Technical Data Sheet Technical Data Sheet의 Part Number, Rev., Update Date, Remark를 나타낸 표 입니다.
Part Number Rev. Update Date Remark
HY62VF08401C 0.2 2004-04-27  

Speed

SpeedSpeed의 Part Number, Speed를 나타낸 표 입니다.
Part Number Speed
55 183MHz
70 133MHz, 3-3-3